Berlin 2008 – scientific programme

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MA: Fachverband Magnetismus

MA 32: Postersession II: Spinstruct./Phase Trans. (1-10); Spinelectronics (11-15); Thin Films (16 - 36); Particles/Clusters (37-45); Multiferroics (46-54); Spindynamics/Spin Torque (55 - 76); Post Deadlines (77-79)

MA 32.56: Poster

Friday, February 29, 2008, 11:15–14:00, Poster E

Current induced switching in MgO-based MTJs with applied bias fields — •Markus Schäfers, Andy Thomas, Karsten Rott, and Günter Reiss — Bielefeld University, Universitätsstraße 25, D-33615 Bielefeld, Germany

The spin-torque effect in magnetic tunnel junctions can be used in future MRAM applications to minimize the size of the memory cell. To provide high read and write performance of such an MRAM modul the switching behaviour of the free layer in the magnetic tunnel junction must be well understood.

We prepared sub-µm-sized MTJs based on CoFeB/MgO/CoFeB by e-beam lithography and argon ion beam etching. The dependence of critical current density for switching the free layer on the applied bias field was investigated.