Berlin 2008 – wissenschaftliches Programm
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MA: Fachverband Magnetismus
MA 5: Spindependent Transportphenomena I
MA 5.1: Vortrag
Montag, 25. Februar 2008, 10:15–10:30, H 0112
Resistance Switching in Nanocolumnar La0.7Sr0.3MnO3 Films — Markus Esseling1, Lakshmana Sudheendra1, •Vasily Moshnyaga1, Konrad Samwer1, Oleg I. Lebedev2, and Gustaaf van Tendeloo2 — 1I. Physikalisches Institut, Universität Göttinge, Friderich-Hund-Platz 1, 37077 Göttingen, Germany — 2EMAT, University of Antwerp, Groenenborgerlaan 171, B2020 Antwerpen, Belgium
We report large (700 %) and reversible electric field induced switching of the resistance in LSMO films, grown by a metalorganic aerosol deposition technique on Al2O3(0001) substrates. The films show nanocolumnar microstructure, formed predominantly by (0001) out-of-plane oriented triangle shaped grains. Magnetotransport behaviour is dominated by the epitaxial (10-10) 60°- and (1-210) 30°- grain boundaries (GB), yielding a pronounced tunnelling magnetoresistance effect. The I(V) curves of microstructured samples (~1x1 mkm2) are strongly nonlinear for small voltages and show reversible switching from a high to the low resistance state at +-7 V. A mechanism for resistance switching is suggested based on the reversible voltage induced change of the angle of Mn-O-Mn bindings at the GB's. SFB 602 TP A2 is acknowledged.