Berlin 2008 – scientific programme

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MM: Fachverband Metall- und Materialphysik

MM 24: SYM Thin Film Magnetic Materials: Microstructure, Reaction and Magnetic Coupling III

MM 24.3: Invited Talk

Wednesday, February 27, 2008, 15:00–15:30, H 1058

KeV-He-ion bombardment induced magnetic modifications and patterning of magnetic thin film systems — •Arno Ehresmann — Institute of Physics and CINSaT, University of Kassel, Heinrich-Plett-Str.40, D-34132 Kassel, Germany

The exchange bias effect in antiferromagnet/ ferromagnet magnetic thin film systems results from the exchange interaction at the interface between both materials. Recently a method has been developed to initialize and tailor the exchange bias in direction and absolute magnitude by bombardment with light ions in a magnetic field [1]. The origin of this effect is a combination of interface and anisotropy modification in the magnetic thin films by the impinging ions. In combining ion bombardment with lithographical techniques a lateral magnetic patterning essentially without change of the surface topography becomes feasible. Besides a brief review of the currently discussed model for the keV-He-ion bombardment induced effects [2], examples for the various possibilities to apply these technique will be given, i.e. among others, tailoring magnitude and direction of the magnetic reference electrode's magnetization in giant magneto and tunnel magneto resistance layer stacks, production of standard samples to magnetically characterize magnetic force microscopy probe tips in in-plane magnetic fields, and positioning of magnetic particles.

Refs.: [1] A. Ehresmann, Recent Res. Devel. Applied Physics 7, 401-21 (2004), [2] A. Ehresmann, D. Junk, D. Engel, A. Paetzold, K. Röll, J. Phys. D. 38, 801-6 (2005)