Berlin 2008 – wissenschaftliches Programm

Bereiche | Tage | Auswahl | Suche | Downloads | Hilfe

MM: Fachverband Metall- und Materialphysik

MM 4: Nanostructured Materials I

MM 4.2: Vortrag

Montag, 25. Februar 2008, 10:30–10:45, H 0107

Charge induced ITO transistor for printable electronics — •Subho Dasgupta, Sebastian Gottschalk, Robert Kruk, and Horst Hahn — 1Institute of Nanotechnology, Forschungszentrum Karlsruhe GmbH, P.O. Box 3640, D-76021 Karlsruhe, Germany

Although research on printable electronics has received increasing attention in the past two decades there are essential scientific and technical problems still to be addressed prior to commercialization. In general, printable electronics with organic or inorganic channels suffer from either very low mobility (pentacene or amorphous silicon FETs) or their fabrication is complicated, costly, requires sophisticated techniques, or involves high processing temperature (polycrystalline silicon or semiconducting oxide FETs). We have fabricated an alternative electrochemically gated JFET with commercial ITO nanoparticles as a channel (with nearly metallic conductance) and an electrolyte as a gate. The device principle is based on a charge induced variation of drain current without any redox reaction at the electrolyte/particle interface. Depending on the electrolyte used, the on/off ratio can be as high as 103. The calculated field-effect mobility is in the range 30-60 cm²/Vs when the whole channel is considered as an array of nanowires whose diameter is equal to the average neck diameter of the nanoparticles. The subthreshold swing (415 mVdec-1) is lower than most of the printable FETs reported so far. The high conductance of the channel can offer added advantage with high on-state current for submicron device sizes. Similar devices fabricated with a solid polymeric electrolyte as a gate dielectric can be ultracheap and readily printable.