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MM: Fachverband Metall- und Materialphysik

MM 43: Phase Transitions IV

MM 43.3: Vortrag

Donnerstag, 28. Februar 2008, 16:30–16:45, H 0107

Genuine Metal-Insulator Transition of V₂O₃ Revealed by Hard X-ray Photoemission — •Hidenori Fujiwara^1,2, Akira Sekiyama¹, Junnichi Yamaguchi¹, Gen Funabashi¹, Shin Imada¹, Sung-Kwan Mo^3,4, James W. Allen³, Patricia Metcalf⁵, Atsushi Higashiya⁶, Makina Yabashi⁷, Kenji Tamasaku⁶, Tetsuya Ishikawa^6,7, and Shigemasa Suga¹ — ¹Graduate School of Engineering Science, Osaka University, Toyonaka, Japan — ²II. Physikalisches Institut, Universität zu Köln, Köln, Germany — ³Randall Laboratory of Physics, University of Michigan, Ann Arbor, USA — ⁴Department of Physics, Stanford University, Stanford, USA — ⁵Department of Physics, Purdue University, West Lafayette, USA — ⁶SPring-8/RIKEN, Sayo, Japan — ⁷SPring-8/JASRI, Sayo, Japan

V₂O₃ is a paradigmatic example of Mott-Hubbard (MH) metal-insulator transition (MIT) materials; it displays the 1st-order transition from the paramagnetic metal (PM) to the antiferromagnetic insulator (AFI) at 150 K. In order to reveal the mechanism of the Mott-Hubbard metal-insulator transition (MH-MIT) in V₂O₃, we have performed the hard X-ray photoemission (HAXPES) with hν = 8170 eV at BL19LXU in SPring-8. The energy resolution was set to 130 meV. The clean surface of the single crystalline sample was obtained by cleavage in situ in ultra-high vacuum. The significant spectral transfer of the V 3d states is observed through the MH-MIT. We reveal the simple Mott-Hubbard scenario does not describe the transition, and new reliable model is required to explain"the MH-MIT on V₂O₃.