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13:15 |
O 10.1 |
Thickness-dependent structural investigation of thin GaN films by Photoelectron Diffraction — •Christoph Raisch, Alexey Sidorenko, Heiko Peisert, and Thomas Chassé
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13:30 |
O 10.2 |
Morphological and chemical characterization of thin heteroepitaxial Praseodymium sesquioxide films on Si(111) — •Andreas Schaefer, Volkmar Zielasek, Thomas Schmidt, Anders Sandell, Joachim Wollschläger, Jens Falta, and Marcus Bäumer
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13:45 |
O 10.3 |
Combined electrical and chemical characterization of BaO thin films on Si(001) — •Dirk Müeller-Sajak, Alexandr Cosceev, Herbert Pfnür, and Karl R. Hofmann
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14:00 |
O 10.4 |
Photoelectron spectroscopy (XPS) studies on the system zirconium oxide on Si(100) — •Frank Schönbohm, Christian Flüchter, Daniel Weier, Sven Döring, Patrick Mehring, Ulf Berges, and Carsten Westphal
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14:15 |
O 10.5 |
The Influence of Carbon Contaminations in Silicon Epitaxy — •Oliver Senftleben, Peter Iskra, Tanja Stimpel-Lindner, Dorota Kulaga-Egger, Ignaz Eisele, and Hermann Baumgärtner
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14:30 |
O 10.6 |
Influence of an Ehrlich-Schwoebel barrier on growth oscillations during epitaxy in layer-by-layer mode — •Christian Heyn
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14:45 |
O 10.7 |
Investigation of a long-ranged ordered silicate adlayer on the 6H-SiC(0001) surface by LEED, AES and IPE — •Nabi Aghdassi, Ralf Ostendorf, and Helmut Zacharias
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15:00 |
O 10.8 |
Optimized hydrogen bake as in-situ removal of residual oxide and carbon on silicon substrates for thin film deposition — •Thomas Zilbauer, Peter Iskra, Dorota Kulaga-Egger, Martin Schlosser, Helmut Lochner, Torsten Sulima, and Ignaz Eisele
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15:15 |
O 10.9 |
Impurity induced growth instabilities — •Jörg Megow and Frank Grosse
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15:30 |
O 10.10 |
Strain Induced Pit Formation in Ge Layers on Si(111) — •Konstantin Romanyuk, Vasily Cherepanov, Bert Voigtländer, and Jacek Brona
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15:45 |
O 10.11 |
Growth and arrangement of silicon and germanium nanowhiskers — •Andrea Kramer
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16:00 |
O 10.12 |
Structure and morphology of graphene layers on SiC(0001) — •Christian Riedl, Chariya Virojanadara, Christian Ast, Alexei Zakharov, Klaus Heinz, and Ulrich Starke
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16:15 |
O 10.13 |
Spatial variation of the Dirac-gap in epitaxial graphene — •Lucia Vitali, Christian Riedl, Robin Ohmann, Ulrich Starke, and Klaus Kern
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16:30 |
O 10.14 |
Graphene band structure near the Dirac point - lifting of the degeneracy ? — Eli Rotenberg, Aaron Bostwick, Taisuke Ohta, Jessica McChesney, Thomas Seyller, and •Karsten Horn
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