Berlin 2008 – scientific programme

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O: Fachverband Oberflächenphysik

O 10: Semiconductor Substrates: Epitaxy and Growth

O 10.8: Talk

Monday, February 25, 2008, 15:00–15:15, MA 042

Optimized hydrogen bake as in-situ removal of residual oxide and carbon on silicon substrates for thin film deposition — •Thomas Zilbauer, Peter Iskra, Dorota Kulaga-Egger, Martin Schlosser, Helmut Lochner, Torsten Sulima, and Ignaz Eisele — Universität der Bundeswehr München, Institut für Physik, Werner-Heisenberg-Weg 39, 85577 Neubiberg

The removal of carbon impurities and the native or chemical oxide from silicon substrates is an increasingly important issue for the fabrication of nanoscale semiconductor devices. Often a last in-situ cleaning step is necessary to prepare the partly recontaminated substrate surface after thorough wet chemical cleaning for a deposition process such as CVD, ALD or MBE.

Heating the substrate to temperatures above 800 °C in a hydrogen ambient leads to quick thermal desorption of the residual oxide. However, carbon impurities on the substrate may cause formation of stable silicon carbide at these elevated temperatures.

We demonstrate results from optimizing the hydrogen bake of a commercially available cluster tool for silicon substrates with different history of wet-chemical pre-treatment. The oxygen and carbon contamination are analyzed by secondary ion mass spectrometry (SIMS). Additionally, I-V-measurements of epitaxially grown p-i-n diodes are used to evaluate the cleaning results.