Berlin 2008 – wissenschaftliches Programm
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O: Fachverband Oberflächenphysik
O 18: Poster Session I - MA 141/144 (Atomic Wires; Size-Selected Clusters; Nanostructures; Metal Substrates: Clean Surfaces+Adsorption of Organic / Bio Molecules+Solid-Liquid Interfaces+Adsorption of O and/or H; Surface or Interface Magnetism; Oxides and Insulators: Clean Surfaces)
O 18.6: Poster
Montag, 25. Februar 2008, 18:30–19:30, Poster F
Two-dimensional electronic structure of dysprosium silicide nanowires on Si(557) — •Martina Wanke1, Karolin Löser1, Gerd Pruskil1, Petar Stojanov2, Eric Huwald2, John Riley2, and Mario Dähne1 — 1Institute of Solid State Physics, Technical University Berlin, D-10623 Berlin, Germany — 2School of Physics, La Trobe University, Bundoora, VIC 3086, Australia
Rare earth silicide nanostructures are of high interest because of their extremely low Schottky barriers on n-Si(111) [1] and the formation of nanowires with one-dimensional metallicity on Si(001) [2]. In this work, the self-organized growth of monolayer-thick dysprosium silicide nanowires on Si(557) has been studied by scanning tunnelling microscopy and angle-resolved photoelectron spectroscopy. The bare Si(557) surface is characterized by (111) and (112) facets [3]. Accordingly, we observed the nanowires forming on the (111) facets. For coverages of 2 Å dysprosium, nanowire lengths exceeding 1 µm and widths around 5 nm were found. Their electronic structure shows a strong dispersion both parallel and perpendicular to the nanowires, which is assigned to the band structure of DySi2 monolayers on Si(111). At higher coverages similar nanowires are observed at the (111) facets, which show characteric structural properties of the multilayer growth and also the Dy3Si5 multilayer band structure.
This work was supported by DFG, project number Da 408/11.
[1] S. Vandré et al., Phys. Rev. Lett. 82, 1927 (1999).
[2] C. Preinesberger et al., J. Appl. Phys. 91, 1695 (2002).
[3] A. Kirakosian et al., Appl. Phys. Lett. 79, 1608 (2001).