Berlin 2008 – scientific programme

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O: Fachverband Oberflächenphysik

O 18: Poster Session I - MA 141/144 (Atomic Wires; Size-Selected Clusters; Nanostructures; Metal Substrates: Clean Surfaces+Adsorption of Organic / Bio Molecules+Solid-Liquid Interfaces+Adsorption of O and/or H; Surface or Interface Magnetism; Oxides and Insulators: Clean Surfaces)

O 18.63: Poster

Monday, February 25, 2008, 18:30–19:30, Poster F

Growth of SiGe nanoislands on prestructured silicon subtrates — •Marlen Schulze, Anne-Kathrin Gerlitzke, and Torsten Boeck — Institute for Crystal Growth in the Forschungsverbund Berlin e. V.

Coherently strained and highly ordered silicon-germanium nanoscale pyramids on silicon, grown by liquid phase epitaxy (LPE) via the Stranski*Krastanov growth mechanism are very interesting objects to reduce the size of semiconductor devices. Generally, LPE is very well appropriate to study fundamental atomistic processes at the liquid-solid interface because it operates very close to thermodynamical phase equilibrium.

A patternlike array of SiGe nanostructures has been realised on prestructured silicon substrates. Si (100) substrates have been patterned by squarelike oxide stripes using local oxidation nanolithography in an atomic force microscope (AFM). The width of the stripes is precisely controlled by progress of the lateral oxidation. Subsequently, LPE was employed to grow SiGe nanoislands on the prepatterned substrates. The truncated pyramids are arranged within the oxide-free cavities directly along the stripes. The final island size significantly probes an effectively lowered lattice mismatch, i.e. a locally expanded crystal lattice in noncovered areas of the silicon substrate.