Berlin 2008 – wissenschaftliches Programm
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O: Fachverband Oberflächenphysik
O 30: Phenomena at Semiconductor Surfaces
O 30.3: Vortrag
Dienstag, 26. Februar 2008, 12:30–12:45, MA 041
Adsorption of small organic ring molecules on GaAs(001) c(4x4) - Structural and electronic properties — •T. Bruhn1,2, R. Passmann1,2, C. Friedrich1, G. Gavrila3, T.A. Nilsen5, W. Braun4, D.R.T. Zahn3, B.O. Fimland5, W. Richter6, M. Kneissl1, N. Esser1,2, and P. Vogt1 — 1TU Berlin, Institut für Festkörperphysik, Hardenbergstr.36, 10623 Berlin, Germany — 2ISAS Berlin, Albert-Einstein-Str.9, 12489 Berlin, Germany — 3TU Chemnitz, Institut für Physik, 09107 Chemnitz, Germany — 4BESSY GmbH, Albert-Einstein-Str.15, 12489 Berlin, Germany — 5NUST, NO-7491 Trondheim, Norway — 6Universita Tor Vergata, Via della Ricerca Scientifica 1, 00133 Roma, Italy
For a selective implementation of functional organic units in semiconductor devices, a detailed understanding of the electronic and structural properties of the interface is indispensable. In a first step, we have investigated the influence of the adsorption of small ring molecules (Cyclopentene (C5H8) and 1,4-Cyclohexadiene (C6H8)) on the GaAs c(4×4) surface. The samples were prepared in UHV and investigated with reflectance anisotropy spectroscopy (RAS), soft x-ray photoelectron spectroscopy (SXPS) and scanning tunneling microscopy (STM). Measurements of the C 1s, Ga 3d and As 3d core levels exhibit a covalent bonding of the molecules to the topmost As dimers. A significant influence on the surface band bending could be observed. Furthermore, the results indicate that the adsorption process depends on functional units of the adsorbed molecules. A structure model of the interface formation is suggested for the first time.