Berlin 2008 – scientific programme
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O: Fachverband Oberflächenphysik
O 33: Symposium: Frontiers of Surface Sensitive Electron Microscopy I (Invited Speakers: James Hannon, Raoul van Gastel, Thomas Schmidt)
O 33.6: Talk
Tuesday, February 26, 2008, 15:30–15:45, MA 005
Characterization of nanosize buried defect in Mo/Si multilayer structure by EUV photoemission electron microscopy — •jingquan lin1, jochen maul2, nils weber3, matthias escher3, michael merkel3, gerd schoenhense2, and ulf kleineberg1 — 1Ludwig Maximilians University,Garching,Germany — 2Mainz University, Mainz, Germany — 3Focus-GmbH, Huenstetten-Kesselbach, Germany
Extreme ultraviolet lithography (EUVL) is one of the leading next-generation lithography candidates for the 32 nm node and below. The fabrication of defect-free masks including their inspection is a significant challenge for the implementation of EUVL. Here, we report experimental results of EUVL mask blank defects and patterned absorber inspection using photoemission electron microscopy (PEEM) technique. With EUV-PEEM, bump-type and pit type defects that buried under EUVL multilayer were investigated. In the case of bump-type defect we have demonstrated its sensitivity to a phase defects with lateral size of 35 nm and height of 4 nm. We also investigated artificial micro-structures with lateral size of several 100 nm in /on top of Mo/Si multilayer structure. The inspection results show that EUV-PEEM has ability of detecting an absorbing micro-structure and a closely-situated tiny defect in the multilayer structure simultaneously. In addition, a comparison detection of phase defect sample with different working wavelength was conducted.