Berlin 2008 – scientific programme
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O: Fachverband Oberflächenphysik
O 35: Symposium: Atomic Wires at Surfaces II
(Invited Speakers: Erio Tosatti, Serge Lemay, Shuji Hasegawa)
O 35.3: Talk
Tuesday, February 26, 2008, 14:45–15:00, HE 101
Atomic structure and electronic properties of rare earth-silicide nanowires on Si(001) — •Martina Wanke1, Christian Preinesberger1, Gerd Pruskil1, Denis Vyalikh2, Sergeij Molodtsov2, Steffen Danzenbächer2, Clemens Laubschat2, Petar Stojanov3, Eric Huwald3, John Riley3, and Mario Dähne1 — 1Institute of Solid State Physics, Technical University Berlin, D-10623 Berlin, Germany — 2Institute of Solid State Physics, Technical University Dresden, D-01219 Dresden, Germany — 3School of Physics, La Trobe University, Bundoora, VIC 3086, Australia
Scanning tunneling microscopy (STM) and angle-resolved photoemission (ARPES) are used to investigate the self-assembly and electronic structure of rare earth silicide nanowires on Si(001) surfaces. Two types of self-assembled nanowires can be formed depending in particular on annealing temperature and material exposure. In high resolution STM images we found closed-packed thin nanowires and free-standing, broad nanowires with similar properties on planar and vicinal Si(001) surfaces. Using ARPES at BESSY II for electronic characterization we discovered three strongly dispersing bands crossing the Fermi energy along the nanowire direction for the free-standing nanowires. A beginning weak dispersion of electronic states is also found for the thin nanowire type. In perpendicular direction both types only show a periodic intensity variation at the Fermi energy, but negligible dispersion. The Fermi surface shows one-dimensional electronic features. This project was supported by DFG, project number Da 408/11.