Berlin 2008 – scientific programme
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O: Fachverband Oberflächenphysik
O 43: Poster Session II - MA 141/144 (Surface Spectroscopy on Kondo Systems; Frontiers of Surface Sensitive Electron Microscopy; Methods: Scanning Probe Techniques+Electronic Structure Theory+Other; Time-Resolved Spectroscopy of Surface Dynamics with EUV and XUV Radiation; joined by SYNF posters)
O 43.21: Poster
Tuesday, February 26, 2008, 18:30–19:30, Poster F
Energy dissipation of ballistic injected electrons and holes through individual molecules — •Alexander Bernhart1, Mark Kaspers1, Bastian Weyers1, Evgeny Zubkov1, Christian Bobisch2, and Rolf Möller1 — 1Department of Physics, University of Duisburg-Essen, 47048 Duisburg, Germany — 2University of California, Irvine, USA
Ballistic Electron Emission Microscopy (BEEM) not only represents an ideal technique to study the electronic transmission at the Schottky-interface between a metal and a semiconductor, but moreover it allows to analyze the ballistic transport through adsorbates on top of a metal. Bismuth (Bi) films with a thickness of 3-4nm were grown on n-doped and p-doped Si(100) and Si(111). Recently we could analyze the ballistic transport of electrons through two different molecular adlayers, PTCDA and C60, deposited on top of the Bi film. In addition the ballistic transport of holes through an adlayer of C60 was studied. All experiments were performed by a modified "Nanoprobe" system (Omicron) providing four STM units which may be operated independently on the same sample. In this case one STM unit was used to contact the metal layer, and other one is operated as a conventional STM at negative or positive tip bias, hence injecting electrons or holes into the sample surface.