Berlin 2008 – scientific programme
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O: Fachverband Oberflächenphysik
O 43: Poster Session II - MA 141/144 (Surface Spectroscopy on Kondo Systems; Frontiers of Surface Sensitive Electron Microscopy; Methods: Scanning Probe Techniques+Electronic Structure Theory+Other; Time-Resolved Spectroscopy of Surface Dynamics with EUV and XUV Radiation; joined by SYNF posters)
O 43.4: Poster
Tuesday, February 26, 2008, 18:30–19:30, Poster F
Setup and Characterization of a Standing-Wave PEEM for EUVL mask inspection — •Jochen maul1, Jingquan Lin2, Andreas Oelsner1, Dima Valdaitsev1, Nils Weber3, Matthias Escher3, Michael Merkel3, Ulf Kleineberg2, and Gerd Schoenhense1 — 1Institut fuer Physik, Staudinger Weg 7, Johannes Gutenberg-Universitaet, D-55128 Mainz — 2Ludwig Maximilian-Universitaet, Am Coulombwall 1, 85748 Garching — 3Focus GmbH, Neukirchner Str. 2, D-65510 Huenstetten-Kesselbach
Extreme ultraviolet lithography (EUVL) is one of the promising possibilities for driving the critical dimensions of semiconductor devices to the ultimate limit. One central issue for chip production using EUVL is the quality of reflective masks with patterned absorbers, employed for the structuring of semiconductor elements. Here, the density and the properties of defects are essential. For multilayer optics, two different types of defects are generally distinguished: amplitude defects and phase defects (or "buried defects") distorting the standing electrical wave inside the multilayer and leading to variations in the field strength at the surface. We show that standing-wave PEEM is a very powerful method as a spatially resolving detector for "at-wavelength (13.5 nm)" metrology. A setup has been designed that allows the study of masks with a size of six square inches. The present detection limit of our method for phase defects is 35 nm.
This work is supported by the European Union (6th Framework program) within the project "Exploring new limits to Moores law- More Moore".