Bereiche | Tage | Auswahl | Suche | Downloads | Hilfe
O: Fachverband Oberflächenphysik
O 49: Particles and Clusters
O 49.9: Vortrag
Mittwoch, 27. Februar 2008, 17:15–17:30, MA 005
Creation of hot electrons below the surface by highly charged ions — •Thorsten Peters1, Chrstian Haake1, Domocos Kovacs2, Detlef Diesing3, Artur Golczewski4, Gregor Kowarik4, Friedrich Aumayr4, Andreas Wucher1, and Marika Schleberger1 — 1Universität Duisburg-Essen, Fachbereich Physik, Lotharstrasse 1, 47057 Duisburg, Germany — 2Experimentalphysik II, Ruhr-Universität Bochum, 44801 Bochum, Germany — 3Physikalische Chemie, Universität Duisburg-Essen, 45117 Essen, Germany — 4Institut für Allgemeine Physik, Technische Universität Wien, A-1040 Vienna, Austria
Highly charged ions provide a unique method for creating ultra high energy densities in the surface region of a solid. Thin film metal-insulator-metal junctions are used in a novel approach to investigate the dissipation of the energy of multiply charged ions impinging on a polycrystalline metal surface. The ion–metal interaction leads to Auger electron emission of several ten eV which again leads to excited electrons and holes within the top layer. A substantial fraction of these charge carriers is transported inwards and can be measured as an internal current in the thin film tunnel junction. In Ag–AlOx–Al junctions, yields of typically 0.1–1 electrons per impinging ion are detected in the bottom Al layer. The separate effects of potential and kinetic energy on the tunneling yield are investigated by varying the charges state of the Ar projectile ions from 2+ to 9+ for kinetic energies in the range from 1 to 12 keV. The tunneling yield is found to scale linearly with the potential and kinetic energy of the projectile.