Berlin 2008 – wissenschaftliches Programm
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O: Fachverband Oberflächenphysik
O 53: Surface Nanopatterns
O 53.4: Vortrag
Mittwoch, 27. Februar 2008, 16:00–16:15, MA 043
High energy Xe+ ion beam induced ripple structures on silicon — •Antje Hanisch1, Joerg Grenzer1, Stefan Facsko1, Ingolf Winkler1, Andreas Biermanns2, Souren Grigorian2, and Ullrich Pietsch2 — 1Forschungszentrum Dresden-Rossendorf, Institute for Ion Beam Physics and Materials Research, Bautzner Landstrasse 128, 01328 Dresden, Germany — 2University of Siegen, Institute of Physics, Walter-Flex-Strasse 3, 57078 Siegen, Germany
Ion beam bombardment on semiconductor surfaces leads to well-defined morphological structures in the nanoscale range. Due to the impact of ions a self-organized wave-like surface structure develops. Ion bombardment causes an amorphization of a surface-adjacent layer of several nanometers and creates a periodical structure on the surface as well as at the amorphous-crystalline interface. We investigate the dependence of the periodicity on the crystallography of (100) silicon bombarded with Xe+ ions, the ion beam incidence and the azimutal angle of the sample surface. So far we found that the ripple wavelength scales with the ion energy in a range of 5 to 70 keV. In order to understand the initiation of the ripple formation we also ask the question which role the initial surface structure plays. Therefore we investigate the formation of ripples on pre-structured and rough surfaces such as wafers with an intentional miscut. Therefore, we not only introduce a certain initial roughness but also vary the orientation of the (100) lattice plane in respect to the surface. We try to distinguish between ion beam induced surface effects (sputter erosion) and the influence of the crystalline Si lattice (strain) on the ripple formation.