Berlin 2008 – wissenschaftliches Programm
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O: Fachverband Oberflächenphysik
O 55: Poster Session III - MA 141/144 (Methods: Atomic and Electronic Structure; Particles and Clusters; Heterogeneous Catalysis; Semiconductor Substrates: Epitaxy and Growth+Adsorption+Clean Surfaces+Solid-Liquid Interfaces; Oxides and Insulators: Solid-Liquid Interfaces+Epitaxy and Growth; Phase Transitions; Metal Substrates: Adsorption of Inorganic Molecules+Epitaxy and Growth; Surface Chemical Reactions; Bimetallic Nanosystems: Tuning Physical and Chemical Properties; Oxides and insulators: Adsorption; Organic, polymeric, biomolecular films; etc.)
O 55.16: Poster
Mittwoch, 27. Februar 2008, 18:30–19:30, Poster F
STM-Study of clean ZnO surfaces and Cu growth on ZnO — •Kroll Martin, Kuschel Thomas, Löber Thomas, and Köhler Ulrich — Ruhr Universität Bochum, Experimentalphysik IV - AG Oberflächen, Bochum, Germany
STM was used to study the polar, zinc terminated ZnO(0001)-Zn surface, the polar, oxygen terminated ZnO(0001)-O surface and the non-polar, mixed terminated ZnO(1010) surface. The influence of atomic hydrogen and water present during different annealing procedures on the large scale morphology of flat and miscut surfaces was investigated. The morphology of the clean ZnO(0001)-Zn surface with characteristic triangular islands changes dramatically when water is present during annealing and on vicinal ZnO(1010) surfaces the regularity of the step train is crucially dependent on the preparation conditions.
Additionally the deposition of Cu using MBE and CVD on the zinc terminated surface were studied. The formation of (111)-orientated Cu-clusters at room-temperature is followed by in-situ applied STM. Kink-sites at step edges and especially the apexes of triangular ZnO-substrate terraces act as preferred nucleation sites. At room temperature the decay of small Cu-islands takes place on a time scale of minutes. Larger Cu-coverages lead to an ensemble of interconnected 3D-islands of uniform height separated by trenches down to the substrate. Further annealing up to 400 ∘C points to a partial entrenching of the islands into the oxide support and (or) an alloy formation.