Berlin 2008 – scientific programme

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O: Fachverband Oberflächenphysik

O 55: Poster Session III - MA 141/144 (Methods: Atomic and Electronic Structure; Particles and Clusters; Heterogeneous Catalysis; Semiconductor Substrates: Epitaxy and Growth+Adsorption+Clean Surfaces+Solid-Liquid Interfaces; Oxides and Insulators: Solid-Liquid Interfaces+Epitaxy and Growth; Phase Transitions; Metal Substrates: Adsorption of Inorganic Molecules+Epitaxy and Growth; Surface Chemical Reactions; Bimetallic Nanosystems: Tuning Physical and Chemical Properties; Oxides and insulators: Adsorption; Organic, polymeric, biomolecular films; etc.)

O 55.22: Poster

Wednesday, February 27, 2008, 18:30–19:30, Poster F

Silver, oxygen and hydrogen deposited on the Bi terminated prestructured Si/Ge surface — •Vasily Cherepanov and Bert Voigtländer — Institute of Bio- and Nanosystems (IBN 3), and cni – Center of Nanoelectronic Systems for Information Technology, Research Centre Jülich, 52425 Jülich, Germany

Si-Ge based nanostructures like wires or dots are attractive objects since they are compatible with an existing silicon technology. The similar nature of Si and Ge allows to grow epitaxial Si/Ge nanostructures using a surfactant like Bi to suppress Si-Ge intermixing. A well ordered array of 2-3 nm wide and atomic layer in heigh Ge nanowires can be formed in a controlled way at Si(111) substrate. However to utilize the electrical properties of those structures one would need to increase the difference in the electrical properties of the wires and the substrate. The Si/Ge structures thus can be used as templates for a next step of selforganized growth of different material which selectively bonds to Si or Ge. The challenge is to find a material which at some condition would stick or interact selectively to Si or Ge. We made an attempt to explore a possible chemical selectivity for Si and Ge surface. The Bi covered surface contained Si and Ge areas was exposed to flux of silver, oxygen and atomic hydrogen at various conditions. The resulting surface structure was examined by scaning tunneling microscopy.