Berlin 2008 – wissenschaftliches Programm
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O: Fachverband Oberflächenphysik
O 55: Poster Session III - MA 141/144 (Methods: Atomic and Electronic Structure; Particles and Clusters; Heterogeneous Catalysis; Semiconductor Substrates: Epitaxy and Growth+Adsorption+Clean Surfaces+Solid-Liquid Interfaces; Oxides and Insulators: Solid-Liquid Interfaces+Epitaxy and Growth; Phase Transitions; Metal Substrates: Adsorption of Inorganic Molecules+Epitaxy and Growth; Surface Chemical Reactions; Bimetallic Nanosystems: Tuning Physical and Chemical Properties; Oxides and insulators: Adsorption; Organic, polymeric, biomolecular films; etc.)
O 55.23: Poster
Mittwoch, 27. Februar 2008, 18:30–19:30, Poster F
Surface Characterisation of MOCVD Single Source Precursor Grown GaSb-films — •Andreas Seemayer1, Alexander Hommes1, Sascha Hümann1, Ralf Hunger2, Stephan Schulz3, and Klaus Wandelt1 — 1University of Bonn, Institute for Physical Chemistry, Wegelerstr. 12, 53115 Bonn — 2Hahn-Meitner-Institute Berlin GmbH c/o BESSY, Albert-Einstein-Str. 15, 12489 Berlin — 3University of Paderborn, Department Chemie, Warburger Str. 100, 33098 Paderborn
III-V semiconductor films used for opto- and microelectronic devices have traditionally been grown by (MO)MBE and LPE processes. An alternative metal-organic CVD-process, which has been established in the last two decades for high-throughput and low-cost fabrication works for nitrides, phosphides and arsenides, but is problematic for antimonides. In particular, for GaSb films an alternative route is a CVD-process using the heterocyclic single source precursor [tBu2 GaSb Et2]2.
Subject of the present work is the investigation of the surface physical properties of the produced films as well as the gas phase behaviour of the used precursor. Therefore films were produced on a Si(100) substrate in a HV-MOCVD reactor and investigated using AES, S-XPS and AFM. In addition, growth experiments under UHV conditions were performed. The results are discussed in terms of a correlation of the electronic properties with the composition and structure of the films.