Berlin 2008 – scientific programme

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O: Fachverband Oberflächenphysik

O 55: Poster Session III - MA 141/144 (Methods: Atomic and Electronic Structure; Particles and Clusters; Heterogeneous Catalysis; Semiconductor Substrates: Epitaxy and Growth+Adsorption+Clean Surfaces+Solid-Liquid Interfaces; Oxides and Insulators: Solid-Liquid Interfaces+Epitaxy and Growth; Phase Transitions; Metal Substrates: Adsorption of Inorganic Molecules+Epitaxy and Growth; Surface Chemical Reactions; Bimetallic Nanosystems: Tuning Physical and Chemical Properties; Oxides and insulators: Adsorption; Organic, polymeric, biomolecular films; etc.)

O 55.24: Poster

Wednesday, February 27, 2008, 18:30–19:30, Poster F

Growth of large laser deposited Cu-pyramides on Si at raised temperatures — •Susanne Seyffarth and Hans-Ulrich Krebs — Institut für Materialphysik, Universität Göttingen, Friedrich-Hund-Platz 1, 37077 Göttingen

Thin Cu films were prepared on Si(111) and Si(100) substrates using pulsed laser deposition (PLD) in ultra high vacuum. Especially the effect of elevated substrate temperatures on the growth of Cu on Si was investigated. While for low substrate temperatures closed films with small grains are observed, for temperatures above 200 ^∘C epitaxial growth of three dimensional pyramides with edge lengths of a few micrometers is observed using scanning electron microscopy (SEM) and atomic force microscopy (AFM). Depending on the orientation of the substrate the base area of the islands is a triangle for Si(111) and a square for Si(100). In both cases the height of the pyramides is up to 500 nm. The epitaxial relationships with the Si substrates, the dependences of the pyramidal sizes on the number of laser pulses, the stability of the structures and possibilities for an ordering of the islands are discussed.