Berlin 2008 – scientific programme
Parts | Days | Selection | Search | Downloads | Help
O: Fachverband Oberflächenphysik
O 55: Poster Session III - MA 141/144 (Methods: Atomic and Electronic Structure; Particles and Clusters; Heterogeneous Catalysis; Semiconductor Substrates: Epitaxy and Growth+Adsorption+Clean Surfaces+Solid-Liquid Interfaces; Oxides and Insulators: Solid-Liquid Interfaces+Epitaxy and Growth; Phase Transitions; Metal Substrates: Adsorption of Inorganic Molecules+Epitaxy and Growth; Surface Chemical Reactions; Bimetallic Nanosystems: Tuning Physical and Chemical Properties; Oxides and insulators: Adsorption; Organic, polymeric, biomolecular films; etc.)
O 55.27: Poster
Wednesday, February 27, 2008, 18:30–19:30, Poster F
STM and STS study of atomic and electronic structure of epitaxial graphene on SiC(0001) — Peter Lauffer1, Konstantin V. Emtsev1, Sergey Reshanov2, Ralf Graupner1, •Thomas Seyller1, Gerhard Pensl2, Heiko B. Weber2, and Lothar Ley1 — 1Lehrstuhl für Technische Physik, Universität Erlangen-Nürnberg, Germany — 2Lehrstuhl für Angewandte Physik, Universität Erlangen-Nürnberg, Germany
Epitaxial growth of graphene on SiC surfaces by solid state graphitization is a promising route for future development of graphene based electronics. In the present work we have studied the morphology, atomic scale structure, and electronic structure of thin films of few-layer graphene on SiC(0001) by scanning tunneling microscopy (STM) and spectroscopy (STS). We discuss the determination of layer thickness based on atomically resolved images and show that such identification can be supported by evaluation of the roughness induced by the interface. We also present and interpret thickness dependent tunneling spectra, which can serve as an additional fingerprint for the determination of the layer thickness.