Berlin 2008 – scientific programme
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O: Fachverband Oberflächenphysik
O 55: Poster Session III - MA 141/144 (Methods: Atomic and Electronic Structure; Particles and Clusters; Heterogeneous Catalysis; Semiconductor Substrates: Epitaxy and Growth+Adsorption+Clean Surfaces+Solid-Liquid Interfaces; Oxides and Insulators: Solid-Liquid Interfaces+Epitaxy and Growth; Phase Transitions; Metal Substrates: Adsorption of Inorganic Molecules+Epitaxy and Growth; Surface Chemical Reactions; Bimetallic Nanosystems: Tuning Physical and Chemical Properties; Oxides and insulators: Adsorption; Organic, polymeric, biomolecular films; etc.)
O 55.28: Poster
Wednesday, February 27, 2008, 18:30–19:30, Poster F
Morphology of epitaxial graphene films on SiC(0001) determined by LEEM — Taisuke Ohta1,2, Farid El Gabaly3, Aaron Bostwick1, Jessica L. McChesney1, Konstantin V. Emtsev4, Andreas K. Schmid3, •Thomas Seyller4, Karsten Horn3, and Eli Rotenberg1 — 1Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, California, USA — 2Fritz-Haber-Institut der Max-Planck-Gesellschaft, Berlin, Germany — 3National Center for Electron Microscopy, Lawrence Berkeley National Laboratory, Berkeley, California, USA — 4Lehrstuhl für Technische Physik, Universität Erlangen-Nürnberg, Germany
Epitaxial films of graphene on SiC surfaces are interesting from a basic physics as well as applications-oriented point of view. In the present work we use low-energy electron microscopy (LEEM) and angle-resolved photoemission (ARPES) to study the morphology of epitaxial graphene films grown on SiC(0001) by solid state graphitization in ultrahigh vacuum (UHV). Different layer thicknesses were witnessed by characteristic electron reflectivity spectra. After relating these to the thickness dependent π-band structure determined by ARPES it is possible to unambiguously assign regions in the LEEM images to the interfacial layer and single-layer as well as bilayer graphene. This information will aid the improvement of the morphology of large scale epitaxial graphene films through optimization of preparation conditions.