Berlin 2008 – scientific programme

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O: Fachverband Oberflächenphysik

O 55: Poster Session III - MA 141/144 (Methods: Atomic and Electronic Structure; Particles and Clusters; Heterogeneous Catalysis; Semiconductor Substrates: Epitaxy and Growth+Adsorption+Clean Surfaces+Solid-Liquid Interfaces; Oxides and Insulators: Solid-Liquid Interfaces+Epitaxy and Growth; Phase Transitions; Metal Substrates: Adsorption of Inorganic Molecules+Epitaxy and Growth; Surface Chemical Reactions; Bimetallic Nanosystems: Tuning Physical and Chemical Properties; Oxides and insulators: Adsorption; Organic, polymeric, biomolecular films; etc.)

O 55.29: Poster

Wednesday, February 27, 2008, 18:30–19:30, Poster F

Interface investigations for III-V solar cells — •Ulf Seidel, Henning Döscher, and Thomas Hannappel — Hahn-Meitner-Institut, Glienicker Str. 100, 14109 Berlin, Germany

III-V multi-junction solar cells currently represent the most efficient photovoltaic devices. The device structures of the tandem solar cells, which were prepared in this work via MOVPE, contain many different layers of III-V semiconductors. For the best performance of the solar cells a sharp hetero-interface preparation via MOVPE was necessary. Here, the investigation of two interfaces is presented in detail: (1) InGaAs/GaAsSb that is needed in the tunnel junction of our low band gap multi-junction solar cell and (2) Si/GaP that is needed for the epitaxy of our III-V solar cells on silicon(100) substrates instead of InP(100). Both interfaces were characterized in-situ during the MOVPE-growth with reflectance difference spectroscopy (RDS) and after a contamination free transfer in ultra high vacuum with X-ray photoelectron spectroscopy (XPS) and low energy electron diffraction (LEED). Additionally AFM micrographs were recorded.