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O: Fachverband Oberflächenphysik

O 55: Poster Session III - MA 141/144 (Methods: Atomic and Electronic Structure; Particles and Clusters; Heterogeneous Catalysis; Semiconductor Substrates: Epitaxy and Growth+Adsorption+Clean Surfaces+Solid-Liquid Interfaces; Oxides and Insulators: Solid-Liquid Interfaces+Epitaxy and Growth; Phase Transitions; Metal Substrates: Adsorption of Inorganic Molecules+Epitaxy and Growth; Surface Chemical Reactions; Bimetallic Nanosystems: Tuning Physical and Chemical Properties; Oxides and insulators: Adsorption; Organic, polymeric, biomolecular films; etc.)

O 55.49: Poster

Mittwoch, 27. Februar 2008, 18:30–19:30, Poster F

Investigation of MgO thin films on Mo(100) by scanning tunneling microscopy and spectroscopy — •Mike Pezzotta, Dinesh Subramaniam, Marco Pratzer, and Markus Morgenstern — II. Physikalisches Institut B, Otto-Blumenthal-Straße, RWTH Aachen and JARA-FIT, 52074 Aachen

Oxide thin films on metallic substrates offer the possibility of investigating the electronic structure of metallic or ferromagnetic atoms at low electronic coupling to the substrate. Magnesium oxide films on a molybdenum substrate are favored because of their flat and nearly defect-free epitaxial growth [1].

We studied the growth of MgO islands on Mo(100) by scanning tunneling microscopy and spectroscopy on the clean Mo surface as well as on the Mo-carbide reconstruction. MgO thin films were prepared by molecular beam epitaxy of magnesium in oxygen athmosphere (p=1*10⁻⁷ mbar). The oxidation process has been controlled by Auger spectroscopy. Annealing temperatures in the range of 900 K to 1100 K result in MgO island sizes up to 50 nm in width and up to 1 nm in height. First spectroscopic dI/dU and dz/dU measurements are presented.

[1] S. Benedetti et. al., Chemical Physics Letters 430 (2006) 330-335.