Berlin 2008 – scientific programme

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O: Fachverband Oberflächenphysik

O 55: Poster Session III - MA 141/144 (Methods: Atomic and Electronic Structure; Particles and Clusters; Heterogeneous Catalysis; Semiconductor Substrates: Epitaxy and Growth+Adsorption+Clean Surfaces+Solid-Liquid Interfaces; Oxides and Insulators: Solid-Liquid Interfaces+Epitaxy and Growth; Phase Transitions; Metal Substrates: Adsorption of Inorganic Molecules+Epitaxy and Growth; Surface Chemical Reactions; Bimetallic Nanosystems: Tuning Physical and Chemical Properties; Oxides and insulators: Adsorption; Organic, polymeric, biomolecular films; etc.)

O 55.63: Poster

Wednesday, February 27, 2008, 18:30–19:30, Poster F

Influence of sputtering effects during homoepitaxial growth of Cu(100) using electron-beam evaporation — •Henning Prüser, Martin Wenderoth, Alexander Weismann, and Rainer G. Ulbrich — IV. Physikalisches Institut der Georg-August-Universität Göttingen

It is well known that ion assisted deposition influences the growth processes in thin film formation. Electron beam evaporators which apply high voltage to the crucible produces a significant fraction of ionized atoms that are accelerated to the sample. We have investigated the impact of this effect on the homoepitaxial growth of copper films using Scanning Tunneling Microscopy. During growth different electrical fields were applied to suppress ion bombardment at varied substrate temperatures. At room temperature without ion suppression a nanostructured surface is found. Rectangular shaped vacancy islands are created quite similar to those obtained by [1]. If an electric field is applied, a multilayer growth mode can be observed. Ion-free deposition at higher substrate temperatures results in a layer by layer growth. This work was supported by DFG SFB 602 TPA3.

[1] M. Ritter et al, Surface Science 348 (1996) 243-252