Berlin 2008 – scientific programme

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O: Fachverband Oberflächenphysik

O 75: Oxides and Insulators: Epitaxy and Growth

O 75.2: Talk

Thursday, February 28, 2008, 15:30–15:45, MA 042

EBSD measurements and optimization of MBE-growth of Aluminum — •rudolf nüssl, torsten sulima, and ignaz eisele — Universität der Bundeswehr, Institut für Physik, Werner-Heisenberg-Weg 39, 85577 Neubiberg

The analysis of microstructure has become an important link between the science and the technology of materials. Since a few years the microstructure-analysis has been revolutionized by a new technique called Electron-Backscatter-Diffraction (EBSD). In this lecture it is shown, how EBSD can be used to optimize metallization systems of microelectronic devices by determining the epitaxial properties of the metallization layers. The metal especially treated in this report is Aluminum, which is deposited on substrates of LiTaO3 using MBE. When Aluminum is deposited directly on the substrate the metal will grow polycristalline. In contrast, if a thin matching-layer of Titanium is added on the crystalline substrate, Aluminum shows highly textured or even epitaxial growth. Additionally the texture quality depends on substrate-heating during deposition. The minimum thickness of the Aluminum film to obtain accurate EBSD-measuring-results was determined to be 200nm.