Berlin 2008 – scientific programme

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O: Fachverband Oberflächenphysik

O 77: Methods: Scanning Probe Techniques I

O 77.8: Talk

Thursday, February 28, 2008, 17:15–17:30, MA 041

Plan view and UHV-cross-sectional STM of GaN structures — •David Krüger, Thomas Schmidt, Stephan Figge, Detlef Hommel, and Jens Falta — Institute of Solid State Physics, University of Bremen, Germany

GaN-growth technology, though still mainly on sapphire substrates today, will be more and more directed towards homoepitaxial growth. Here, not only the polar c-plane of GaN is of interest, especially the non-polar perpendicular planes (e.g. m-plane) may be of even greater importance. XSTM investigations of GaN substrates cleaved under UHV conditions have been untertaken to reveal structural properties of their cross-sections. Moreover, STM-investigations of InGaN grown on sapphire based c-plane GaN-templates will be presented.