Berlin 2008 – scientific programme
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O: Fachverband Oberflächenphysik
O 88: Metallic Nanostructures II (on Semiconductors)
O 88.9: Talk
Friday, February 29, 2008, 11:30–11:45, MA 005
Evaluation of near field enhanced Raman spectroscopy on industrial Silicon structures — •Benjamin Uhlig1, Jens-Hendrik Zollondz2,3, Marc Tobias Wenzel4, Martin Haberjahn2,3, Peter Kücher3, and Lukas M. Eng4 — 1Fraunhofer -Institut für Keramische Technologien und Systeme, Winterbergstrasse 28, 01277 Dresden, Germany — 2Qimonda Dresden GmbH & Co. OHG, Königsbrücker Strasse 180, D-01099 Dresden, Germany — 3Center of Competence CoC Metrology/Analytic, Fraunhofer-Center Nanoelektronische Technologien CNT, Königsbrücker Straße 180, D-01099 Dresden, Germany — 4Institut für Angewandte Photophysik, TU Dresden, George-Bähr-Straße 1, D-01069 Dresden, Germany
Following Moores Law, semiconductor structures become smaller and smaller. The understanding of stress intentionally implemented in devices or stress in multi layer components due to thermal mismatch is a major challenge for metrology. A promising technique to obtain highly localized stress information is Tip Enhanced Raman Spectroscopy (TERS). This paper discusses under which conditions TERS can be applied to industrial semiconductor structures and which effects can be expected. In order to obtain an idea of the enhancement effects on Silicon, we show several Surface Enhanced Raman Spectroscopy (SERS) experiments using Au nanoparticles. By varying particle diameter, incident laser wavelength, aperture angle, aswell as incoming and scattered polarization orientation we achieve up to 100% enhancement on bulk Silicon (100 nm Au nanoparticles, 633 nm laser excitation).