Berlin 2008 – wissenschaftliches Programm
Bereiche | Tage | Auswahl | Suche | Downloads | Hilfe
O: Fachverband Oberflächenphysik
O 89: Metal Substrates: Epitaxy and Growth
O 89.5: Vortrag
Freitag, 29. Februar 2008, 10:30–10:45, MA 041
Initial growth of Cu on Cu(001) by in-situ pulsed laser deposition at low temperatures — •Andreas Dobler and Thomas Fauster — Lehrstuhl für Festkörperphysik, Universität Erlangen-Nürnberg, Staudtstr. 7, 91058 Erlangen
In previous studies we have characterized the initial growth of Cu on Cu(001) by pulsed-laser deposition (PLD) near room temperature by scanning tunneling microscopy (STM). In order to extend the temperature range to lower temperatures, we designed a setup which permits direct deposition onto the sample in the STM at pressures of 1.5× 10−10 mbar. The distance between the ablation target and the sample is 270 mm and the incidence angle is 60∘ relative to the sample normal. The deposition rate is 2.5× 10−5 atomic layers per pulse at a fluence of 3.5 J/cm2.
We present first results on the initial growth of Cu on Cu(001) using the in-situ PLD setup. At the large incidence angle, sputtering holes appear on the surface due to the high kinetic energies of the deposited particles. We analyzed the densities of monolayer and vacancy islands at different temperatures and laser fluences and compared the results to thermal deposition measurements at identical conditions. Self-sputtering can be reduced by lowering the fluence and applying a magnetic field which eliminates ions of the ablation plume.