Berlin 2008 –
wissenschaftliches Programm
O 93: Surface Chemical Reactions
Freitag, 29. Februar 2008, 10:15–13:00, MA 043
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10:15 |
O 93.1 |
A two-step mechanism for the oxidation of vacancies in graphene — •Johan M. Carlsson, Felix Hanke, and Matthias Scheffler
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10:30 |
O 93.2 |
Structure and Composition of the TiO2(110) Surface: From UHV to Realistic Reaction Conditions — •Piotr Kowalski, Bernd Meyer, and Dominik Marx
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10:45 |
O 93.3 |
Dissociation of oxygen on Ag(100) by electron induced manipulation — •Carsten Sprodowski, Michael Mehlhorn, and Karina Morgenstern
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11:00 |
O 93.4 |
Modeling NOx Storage Materials: Adsorption and interaction of NO2 with BaO nanoparticles — •Thorsten Staudt, Aine Desikusumastuti, Sandra Gardonio, Silvano Lizzit, Erik Vesselli, Alessandro Baraldi, and Jörg Libuda
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11:15 |
O 93.5 |
Internal exoemission in K/p-Si(001) Schottky diodes — •Kornelia Huba, David Krix, and Hermann Nienhaus
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11:30 |
O 93.6 |
Non-adiabatic Phenomena during Oxidation of K/Pd-Thin-Films on Silicon — •David Krix, Kornelia Huba, and Hermann Nienhaus
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11:45 |
O 93.7 |
Particle size dependence of adsorption state and photodesorption of NO on AgNPs on thin alumina film — •Daniel Mulugeta, Ki Hyun Kim, Kazuo Watanabe, Dietrich Menzel, and Hans-Joachim Freund
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12:00 |
O 93.8 |
Chemicurrent studies on bimetallic surfaces — •Beate Schindler, Eckart Hasselbrink, and Detlef Diesing
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12:15 |
O 93.9 |
Investigating the binding sites of solvated electrons in polar layers adsorbed on Cu(111) — •Michael Meyer, Julia Stähler, Uwe Bovensiepen, and Martin Wolf
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12:30 |
O 93.10 |
Electronic valence band structure of V2O5 — •Torsten Stemmler, Maximilian Kauert, Helmut Dwelk, and Recardo Manzke
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12:45 |
O 93.11 |
STM-induced Switching of Hydrogen on a Silicon(100) Surface: An Open-System Density Matrix Study — •Karl Zenichowski, Tillmann Klamroth, and Peter Saalfrank
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