Berlin 2008 – wissenschaftliches Programm
Bereiche | Tage | Auswahl | Suche | Downloads | Hilfe
SYSA: Symposium Tayloring Organic Interfaces: Molecular Structures and Applications
SYSA 4: Organic Devices II
SYSA 4.3: Vortrag
Dienstag, 26. Februar 2008, 17:15–17:30, H 2013
Advanced modelling of optoelectronic characteristics of OLEDs — •Robert Nitsche1, Matthias Kurpiers-Günther1, Michael Thomschke2, Matthias Schober2, and Karl Leo2 — 1sim4tec GmbH, Schönfelder Landstr. 8, 01328 Dresden — 2Insitut für Angewandte Photophysik, TU Dresden, George-Bähr-Str. 1, 01069 Dresden
A rapid development of highly efficient OLED devices could be observed during the last years. The main work was carried out using experimental trial and error methods which are cost intensive and time consuming. A better approach is to conduct numerical simulations for device design and optimization beforehand, thus reducing the experimental work significantly and gaining a deep understanding of the underlying device physics.
Here, we report on simulation results of multilayer single carrier devices and multilayer fluorescent and phosphorescent OLEDs including doped transport and emitter layers, using the integral OLED device simulator SimOLED. We first give an overview on optical and electrical modelling of OLEDs and discuss methodologies to obtain correct input parameters from fitting experimental results. Special focus is paid to the ambiguity of the extracted parameters to be used for further device modelling. The simulation results are compared to experimental data and conclusions are drawn concerning the distribution of electric field, recombination rates and exciton densities as well as charge carrier balance in the devices. Finally, we propose a generalized scheme for performing OLED simulations with predictive character.