Berlin 2008 – scientific programme

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SYSA: Symposium Tayloring Organic Interfaces: Molecular Structures and Applications

SYSA 4: Organic Devices II

SYSA 4.6: Talk

Tuesday, February 26, 2008, 18:00–18:15, H 2013

Hysteresis effects and non-volatile memory behaviour of organic heterostructure devices. — •Frank Lindner, Karsten Walzer, and Karl Leo — Institut für Angewandte Photophysik, TU Dresden, D-01062 Dresden

Within the last few years, organic memory devices have attracted considerable attention. During such experiments, we observed a hysteretic current-voltage behaviour of organic heterostructure devices. We report reproducible bistable electrical switching and memory phenomena in an organic multilayer heterostructure, consisting of materials which are well characterized from organic light emitting device investigations. Similar to OLEDs, the organic layers were embedded between a ITO and a metal contact. In contrast to other organic memory concepts we reached a high reproducibility and stability. The measured current-voltage characteristics shows two states of different conductivity at the same applied voltage. We could achieve more then 1000 Write-Read-Erase cycles without degradation. It was found that the ratio of the ON/OFF current depends on the writing and erasing voltage, respectively. The two states were yet retained for several days before reading the devices. Both states are stable at room temperature and can be measured reproducibly. We discuss the device operation mechanism. Device performance tests show that the heterostructure devices are a promising candidate for high-density, low-cost electrically addressable data storage applications.