Berlin 2008 – scientific programme

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SYSA: Symposium Tayloring Organic Interfaces: Molecular Structures and Applications

SYSA 5: Poster Session SYSA

SYSA 5.5: Poster

Tuesday, February 26, 2008, 14:30–20:00, Poster A

Investigations of contact resistances in polythiophene organic field effect transistors via a gated four-probe method — •Fabian Johnen, Elizabeth von Hauff, and Jürgen Parisi — Institute of Physics, Energy and Semiconductor Research Laboratory, Carl von Ossietzky Univerität of Oldenburg, 26111 Oldenburg, Germany

In this study the effect of contact resistances on device behaviour in polythiophene (P3HT) organic field effect transistors (OFETs) was investigated. The transistors consist of a contact geometry with Au source and drain electrodes and two additional Au channel electrodes between the source and drain contacts. The contact geometry is patterned using photolithography. High impedance electrometers are used to measure the potentials at each of the channel electrodes. The voltage drop in the source and drain contact regions can then be determined. This allows for direct investigation of the temperature and field dependence of the contact resistance. The thickness of the PH3T layer was varied to investigate the influence of the thickness on the accuracy of the four-probe method.