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SYSA: Symposium Tayloring Organic Interfaces: Molecular Structures and Applications

SYSA 5: Poster Session SYSA

SYSA 5.9: Poster

Dienstag, 26. Februar 2008, 14:30–20:00, Poster A

Investigation of the Schottky Barrier in Ag/CuPc/H-Si(111) Structures — •Iulia Genoveva Korodi, Jan Ivanco, and Dietrich R.T. Zahn — Chemnitz University of Technology, Semiconductor Physics, D-09107 Chemnitz, Germany

In this work molecular layers of copper phthalocyanine (CuPc) with thicknesses ranging from 1ML to 4ML were deposited on hydrogen passivated n-type silicon (111) substrate by Organic Molecular Beam Epitaxy (OMBE) under high vacuum (HV) conditions. Metal contacts of silver (Ag) were formed on top using thermal evaporation under the same HV conditions. In situ current-voltage (I-V) measurements were performed on these organic modified systems in order to investigate the influence of the CuPc interlayers on the barrier height of Ag/H-Si(111) Schottky contacts. The Schottky barrier height (0.665±0.005 eV for the Ag/H-Si reference sample) tends to decrease (i.e. by approximately 0.15 eV for 4ML) with increasing organic interlayer thickness. The I-V curves under forward bias were simulated in order to extract the Schottky barrier and the results were compared with experimental ones.