Berlin 2008 – scientific programme

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TT: Fachverband Tiefe Temperaturen

TT 21: Transport: Graphene and Carbon Nanotubes

TT 21.5: Talk

Tuesday, February 26, 2008, 16:45–17:00, EB 202

Conductance and mobility of charge carriers in graphene on silicon carbide — •Johannes Jobst¹, Sergey Reshanov¹, Daniel Waldmann¹, Heiko B. Weber¹, Konstantin V. Emtsev², and Thomas Seyller² — ¹Lehrstuhl für Angewandte Physik, Universität Erlangen-Nürnberg, Staudtstr. 7/A3, 91058 Erlangen, Germany — ²Lehrstuhl für Technische Physik, Universität Erlangen-Nürnberg, Erwin-Rommel-Str. 1, 91058 Erlangen, Germany

We have studied the electronic transport properties of few-layer graphene grown by thermal treatment of 6H silicon carbide. Both graphene grown on the carbon face and on the silicon face were investigated. The transport properties of large area films were characterized in van der Pauw geometry. Mobilities up to 7000 cm²/Vs were observed. In addition, micrometer-sized Hall bar structures were fabricated, which allowed for the determination of Hall mobility and density of charge carriers. The size of these structures was reduced to atomically flat terraces of the silicon carbide surface. However, opposite to our expectations, Hall mobilities determined in these structures did not exceed values of 1000 cm²/Vs. The role of surface contamination is discussed.