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TT: Fachverband Tiefe Temperaturen

TT 22: Transport: Poster Session

TT 22.54: Poster

Mittwoch, 27. Februar 2008, 14:00–18:00, Poster B

Influence of dephasing to the intrinsic spin Hall effect — •Pei Wang — Institut für Physik, Universität Augsburg und LMU München

The intrinsic spin Hall effect has attracted much attention in recent years, because it can be used to generate spin-polarized currents in paramagnetic semiconductors electronically. In the spin Hall effect, a longitudinal electric field creates a transverse motion of spins with the spin-up and spin-down carriers moving in opposite directions, which leads to a transverse spin current perpendicular to the external electric field. I will introduce the intrinsic spin Hall effect in a 2DEG with Rashba spin-orbit coupling and in p-type semiconductors described by a Luttinger Hamiltonian. The spin Hall conductivity in the presence of nonmagnetic and magnetic impurities is calculated. The critical influence of dephasing (inelastic scattering) to the spin Hall effect is discussed.