Berlin 2008 – scientific programme
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TT: Fachverband Tiefe Temperaturen
TT 32: Correlated Electrons: Poster Session
TT 32.36: Poster
Thursday, February 28, 2008, 14:00–18:00, Poster B
Electronic properties of transition metal impurities in MgO thin films — •Rainald Gierth1, Tim Haupricht1, Chun-Fu Chang1, Zhiwei Hu1, Thomas Koethe1, H. H. Hsieh2, H.-J. Lin3, C. T. Chen3, and Liu Hao Tjeng1 — 1Institute of Physics II, University of Cologne, Germany — 2Chung Cheng Institute of Technology, National Defense University, Taoyuan, Taiwan — 3National Synchrotron Radiation Research Center, Hsinchu, Taiwan
We have studied the electronic structure of transition metal impurities in MgO. These systems can serve as model systems for various (usually more complicated) dn systems in octahedral symmetry. Going from bulk crystals to impurity systems the core level and valence band photoemission spectra can change significantly e.g. due to the influence of non-local screening effects. We present our core level and valence band photoemission data of Ni and Mn impurities in MgO thin films epitaxially grown on Ag(001) in-situ, taken at different photon energies. Changes in the shape as well as in the width of the spectra are observed. The experimental results are compared to various theoretical approaches.