Darmstadt 2008 – wissenschaftliches Programm
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A: Fachverband Atomphysik
A 29: Electron scattering and recombination
A 29.4: Vortrag
Freitag, 14. März 2008, 12:00–12:15, 3D
Electron-impact ionization of xenon ions — •Alexander Borovik Jr1, Mohammad Gharabeih2, Carsten Brandau1, Stefan Schippers1, and Alfred Müller1 — 1Institut für Atom- und Moleküöphysik, Justus-Liebig Universität, Giessen, Germany — 2Jordan University of Science and Technology, Irbid, Jordan
With their many subshells at comparatively low binding energies xenon ions offer rich opportunities to study many-electron processes such as excitation followed by autoionization and resonant electron capture with subsequent multiple electron emission. In high-temperature plasmas Xe ions emit strongly in the extreme ultraviolet spectral range. Recent interest in applying the EUV radiation of xenon or tin ions to lithography has led to the construction of light sources based on laser-produced plasmas or gas discharges. In the effort to optimize for maximum radiation output a detailed understanding of the origin of the radiation and the production of the radiating ions is necessary.
We report on measurements of cross sections for electron-impact single ionization of Xeq+ ions with q ranging from 1 to 15. Xe ions are produced in charge states up to 27 by using an 10-GHz-electron cyclotron resonance (ECR) ion source. The electron-ion crossed beams technique is used for the measurement of cross sections for single and multiple ionization. Beside the measurement of absolute cross sections an energy-scanning method is applied to uncover detailed structures in the ionization cross sections.