Darmstadt 2008 – wissenschaftliches Programm

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P: Fachverband Plasmaphysik

P 15: Niedertemperaturplasmen, Plasmatechnologie II

P 15.4: Vortrag

Donnerstag, 13. März 2008, 15:15–15:30, 2G

Depth profiling and quantification of Oxygen PIII modified Titanium — •Martin Polak¹, Antje Quade¹, Hartmut Steffen¹, Andreas Ohl¹, Klaus-Dieter Weltmann¹, Marion Quaas², and Harm Wulff² — ¹Leibniz Institute for Plasma Science and Technology e.V. (INP), Greifswald, Germany — ²University of Greifswald - Institute of Biochemistry, Greifswald, Germany

To a large extent the performance characteristics of titanium is determined by the properties of the titanium oxide layer on its surface. Thus methods are of great interest, which allow to modify and to control the properties of this oxide and of the transition region from the oxide to the bulk material. Here we report results of plasma immersion ion implantation (PIII) experiments using oxygen as a working gas. The aim of these experiments was to replace the naturally grown oxide layer which is undefined by chemical composition by a pure oxide layer. By varying the pulse - pause ratio the deposited power and the related temperature of the sample changes and a transition between pure PIII and PIII with oxygen in depth diffusion could be obtained. The modification and thickness of the TiO₂ layer were investigated with GIXRD and XPS depth profiling. For the first time a quantification of the modified subsurface was tried by measuring the Ti 2p peak with XPS at a higher resolution. The in depth concentration of the different titanium oxidation stages (Ti(0), Ti(II), Ti(III) and Ti(IV)) could be estimated. These XPS depth profiles fit quiet well with the GIXRD pattern. The results were also compared with the results from the untreated titanium subsurface and TRIM simulations.