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T: Fachverband Teilchenphysik

T 55: Halbleiterdetektoren II

T 55.3: Vortrag

Dienstag, 4. März 2008, 17:15–17:30, KGI-HS 1228

Development of new types of photo-sensors as an alternative to SiPMs — •Jelena Ninkovic^1,2, Rouven Eckhart^3,2, Robert Hartmann^3,2, Peter Holl^3,2, Cristian Koitsch^3,2, Gerhard Lutz^3,2, Razmik Mirzoyan¹, Hans-Günther Moser^1,2, Rainer Richter^1,2, Gerhard Schaller^4,3, Florian Schopper^4,3, Heike Soltau^3,2, Masahiro Teshima¹, George Valceanu^1,2, and Ladisav Andricek^1,2 — ¹Max-Planck-Institute for Physics, Föhringer Ring 6, D-80805 Munich, Germany — ²Max-Planck-Institute Semiconductor Laboratory, Otto-Hahn-Ring 6, D-81739 Munich, Germany — ³PNSensor GmbH, Römerstr. 28, D-80803 Munich, Germany — ⁴Max-Planck-Institute for Extraterrestrial Physics, Giessenbachstraße, D-85748 Garching, Germany

Development of photo-sensors for detection of low intensity photon flux is one of the critical issues for experimental physics, medical tomography and many other areas. A few years ago a new type of photodetector was introduced; the so-called Silicon photomultiplier (SiPM). Its good characteristics make SiPM suitable for many applications. Yet, for the low light level applications higher quantum efficiency is required. Two alternative approaches have been developed within semiconductor laboratory of Max Planck Society. The first promises very high (>80%) quantum efficiency in the wide wavelength range (300-1000nm). Second device increased QE and simplified production technology compared to conventional SiPMs. Extensive simulations have demonstrated the validity of both concepts. Both approaches will be presented as well as results from the first proof of principle productions.