Dresden 2009 – wissenschaftliches Programm

Bereiche | Tage | Auswahl | Suche | Downloads | Hilfe

CPP: Fachverband Chemische Physik und Polymerphysik

CPP 9: Nanoparticles II

CPP 9.6: Vortrag

Montag, 23. März 2009, 15:15–15:30, ZEU 114

Optoelectronic properties of surface-modified Ge quantum dots — •Ivan Litzov¹, Vincent Groenewegen¹, Carola Kryschi¹, Hartmut Wiggers², and Dietrich Haarer³ — ¹Dept. Chemistry and Pharmacy, Physical Chemistry I and ICMM, FAU, Egerlandstr. 3, 91058 Erlangen — ²Institute for Combustion and Gas Dynamics, University of Duisburg-Essen, Lotharstr.1, 47048 Duisburg — ³BIMF, University of Bayreuth, Universitaetsstr. 1, 95440 Bayreuth

This contribution is targeted to the development of functionalized Ge quantum dots tailored for optoelectronic applications such as solar cells and light emitting diodes. Ge qdots with sizes around 7 nm were successfully surface-modified via HF etching followed by thermal germylation with different unsaturated organic compounds. The surface modified Ge qdots exhibit photoluminescence peaking between 750 and 850 nm, while a fs spectroscopy study gave indication to photo-induced electron transfer from surface bound compounds to conduction band states of the Ge core. The eligibility of surface-modified Ge qdots for hybrid solar cells was studied by measuring photocurrent-action spectra and determining the power conversion efficiency for systematically varied compositions and thicknesses of P3HT:Ge qdot films sandwiched by an ITO glass substrate and a LiF/Alu contact layer.