Dresden 2009 – scientific programme
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DF: Fachverband Dielektrische Festkörper
DF 10: Photonic Dielectrics I
DF 10.6: Talk
Wednesday, March 25, 2009, 12:00–12:20, WIL A317
Conductivity through an organic field-effect transistor with ferroelectric gating — •Tim Kunze1, Sibylle Gemming1, Regina Luschtinetz2, Volker Pankoke1, and Michael Schreiber3 — 1Forschungszentrum Dresden-Rossendorf, P.O. Box 51 01 19, D-01314 Dresden, Germany — 2Physical Chemistry and Electrochemistry, TU Dresden, D-01062 Dresden, Germany — 3Institute of Physics, TU Chemnitz, D-09107 Chemnitz, Germany
The electronic transport of electrons and holes through stacks of functionalized quaterthiophene molecules as part of a novel organic ferroic field-effect transistor is investigated. The novel application of a ferroelectric instead of a dielectric substrate provides a bit-wise switching of the ferroelectric domains and enables the opportunity of employing the polarization field of these domains as a gate field in an organic semiconducting device. An already established phenomenological model called multilayer organic light-emitting diodes (MOLED) [1] is extended to transverse fields and numerical results are discussed. Model-specific parameters are determined with the help of experimental and theoretical methods.
[1] Houili et al., Comp. Phys. Comm. 156, 103-122 (2003)