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Dresden 2009 – scientific programme

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DF: Fachverband Dielektrische Festkörper

DF 12: Poster II

DF 12.1: Poster

Wednesday, March 25, 2009, 09:30–12:30, P5

Cr doping of epitaxial PbZr0.2Ti0.8O3 films — •Ludwig Feigl1, Eckhard Pippel1, Ionela Vrejoiu1, Rüdiger-A. Eichel2, Emre Erdem2, Roland Mattheis3, Marin Alexe1, and Dietrich Hesse11Max Planck Institute of Microstructure Physics, Weinberg 2, D-06120 Halle, Germany — 2Institut für Physikalische Chemie I, Universität Freiburg, D-79104 Freiburg, Germany — 3Institut für Photonische Technologien (IPHT), D-07702 Jena, Germany

RBS investigations suggested that Cr impurities are present in epitaxial PZT20/80 films deposited from a stoichiometric Pb1.1Zr0.2Ti0.8O3 target by PLD. To investigate the possible impact of these impurities on the properties of the films, Cr doped PZT20/80 films were deposited onto a SrRuO3 electrode grown on a vicinal (100) SrTiO3 substrate. Various dopant concentrations can be achieved by alternately ablating a pure and a highly doped PZT20/80 target. The structural properties are investigated by means of TEM both in conventional and in high resolution scanning mode combined with EDX. Measurements of the polarization, the dielectric constant and the leakage current in dependence on the applied voltage were performed. The Schottky model is used to derive the electronic properties of the film. The Cr is found to (I) increase the leakage current through a reduction of the Schottky barrier; (II) change the film growth by facilitating relaxation. As shown by EPR, Cr is incorporated at the octahedrally coordinated [Zr,Ti]-site, acting as an acceptor and favoring a directly coordinated oxygen vacancy to the chromium center for partial charge compensation. The dipole is oriented parallel to the spontaneous polarization.

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