Dresden 2009 – wissenschaftliches Programm
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DF: Fachverband Dielektrische Festkörper
DF 13: Thin Films and Nanostructures I
DF 13.6: Vortrag
Mittwoch, 25. März 2009, 16:20–16:40, WIL B321
Study of C60 based films formation by NEXAFS — •Daniel Friedrich1, Marcel Michling1, Jolanta Klocek1, Dieter Schmeißer1, Stas Avdoshenko2, Dmytro Chumakov3, and Ehrenfried Zschech3 — 1Brandenburgische Technische Universität Cottbus, Angewandte Physik - Sensorik, Konrad-Wachsmann-Allee 17, 03046 Cottbus, Germany — 2Department of Chemistry, M. V. Lomonosov Moscow State University, 1 Leninskie Gory, 119991 Moscow, Russian Federation — 3AMD Fab36 LLC & Co. KG, Wilschdorfer Landstraße 101, 01099 Dresden, Germany
The C60 fullerenes and some of its -OH, -CF3 and -Cl derivates are candidates for application as ultra-low-k insulators in the semiconductor industry. Future preparation of thin films based on these materials requires the stability of the substituted fullerenes against chemical handling and processing steps. The latter issue was addressed by our NEXAFS studies that were done by synchrotron radiation at the beam line U49/2-PGM2 at BESSY II. Performed were the C K-edge NEXAFS studies in total fluorescence and total electron yield modes. The C60 based films were deposited on silicon by spraying from solutions. The influence of the different substitutional groups with C60 molecules was studied. The data were compared to the reference spectra of a pure C60 film. For C60(OH)24, C60-Cl2 and C60(CF3)12 a variance of the intensity of the π*-resonance as well as shift to higher energies of 0.5 eV (-OH), 0.6 eV (-F), 0.7 eV (-Cl) were observed. The results confirm the necessary stability of the used C60 derivatives and shall be used for optimization of the film deposition chemistry and conditions.