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DF: Fachverband Dielektrische Festkörper

DF 15: Thin Films and Nanostructures II

DF 15.7: Vortrag

Donnerstag, 26. März 2009, 12:40–13:00, WIL B321

Growth of Conductive HfO_2−x Thin Films by Reactive Molecular Beam Epitaxy — •Erwin Hildebrandt¹, Jose Kurian¹, Hans-Joachim Kleebe², and Lambert Alff¹ — ¹Institut für Materialwissenschaft, TU Darmstadt, Germany — ²Institut für Angewandte Geowissenschaften, TU Darmstadt, Germany

Thin films of oxygen deficient hafnium oxide were grown on single crystal c-cut and r-cut sapphire substrates by reactive molecular beam epitaxy. The oxidation conditions during growth were varied within a wide range using RF-activated oxygen. Hafnium oxide thin films were characterized using X-ray diffraction, resistivity measurements (ρ-T) and transmission electron microscopy (TEM). The results show a dramatic increase in conductivity of the deposited oxygen deficient hafnium oxide thin films with decreasing oxidation conditions during growth. The electrical properties of deficient hafnium oxide thin films varied from insulating over semiconducting to conducting. X-ray diffraction data as well as TEM data rule out the possibility of conductivity due to metallic hafnium.