Dresden 2009 – scientific programme
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DF: Fachverband Dielektrische Festkörper
DF 5: High-k and low-k Dielectrics
DF 5.6: Talk
Monday, March 23, 2009, 16:40–17:00, WIL B321
Growth investigation of thin Ti-based high-k films — •Andreas Krause, Dominik Martin, Matthias Grube, and Walter M. Weber — namlab gGmbH, D-01187 Dresden
With the further increase in integration density of microelectronics, ordinary SiO2-based stacks reach their limits as leakage currents increase significantly. Therefore, dielectric materials are required that combine a high dielectric constant (k) and low leakage currents, such as Ti-based oxides. Different titanates, like HfTiOx or CaTiOx with thicknesses up to 100 nm were deposited via an UHV sputtering tool. As substrates, n++-Si-wafers were used as well as Si-wafers coated with TiN or noble metal (Ru, Pt) layers. The morphology was studied with atomic force microscopy and capacitor-voltage measurements were performed to extract the k-value.