DF 5: High-k and low-k Dielectrics
Monday, March 23, 2009, 15:00–17:00, WIL B321
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15:00 |
DF 5.1 |
Dielectric properties of A2/3Cu3Ti4O12 (A = La, Pr, Nd, Sm, Eu, Gd, Tb, Dy) — •Jürgen Sebald, Stephan Krohns, Peter Lunkenheimer, Stefan Riegg, Stefan G. Ebbinghaus, and Alois Loidl
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15:20 |
DF 5.2 |
Characterization of (SrO)x(ZrO2)(1−x) thin films for use in metal insulator metal capacitors — •Matthias Grube, Oliver Bierwagen, Dominik Martin, Lutz Geelhaar, and Henning Riechert
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15:40 |
DF 5.3 |
Ternary rare-earth based alternative gate-dielectrics for future integration in MOSFETs — •Jürgen Schubert, Joao Marcelo Lopes, Eylem Durgun Özben, Roman Luptak, Steffi Lenk, Willi Zander, and Martin Roeckerath
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16:00 |
DF 5.4 |
The deposition of rare-earth oxide ultrathin-films with inorganic precursors — •Maraike Ahlf, Hanno schnars, Oliver Skibitzki, Marvin Zöllner, Katharina Al-Shamery, Mareike Ahlers, and Mathias Wickleder
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16:20 |
DF 5.5 |
High performance MIM capacitors with Atomic Vapour Deposited HfO2 dielectrics — •Mindaugas Lukosius, Christian Wenger, Christian Walczyk, and Hans-Joachim Müssig
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16:40 |
DF 5.6 |
Growth investigation of thin Ti-based high-k films — •Andreas Krause, Dominik Martin, Matthias Grube, and Walter M. Weber
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