Dresden 2009 – scientific programme
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DF: Fachverband Dielektrische Festkörper
DF 6: Poster I
DF 6.5: Poster
Tuesday, March 24, 2009, 09:30–12:30, P5
The electronic band diagram of thin PrO2(111) / Pr-silicate buffers on Si(111) and its relevance to dielectric properties — •Olaf Seifarth1, Christian Walczyk1, Grzegorz Lupina1, Peter Zaumseil1, Dieter Schmeißer2, Hans-Joachim Müssig1, and Thomas Schroeder1 — 1IHP, 15236 Frankfurt, Im Technologiepark 25 — 2BTU Cottbus, 03046 Cottbus, Konrad-Wachsmann Allee 17
Thin dielectric buffers of cubic PrO2(111) on Si(111) are ideally suited to integrate Ge onto Si by moderating the lattice mismatch between the materials. The leakage current across this dielectric buffer is strongly influenced by the electronic band diagram and defects inside the band gap. Therefore, we measured the band offsets, band gaps and defect positions by means of synchrotron radiation based photoemission spectroscopy techniques (XPS and XAS) with special emphasis on the Pr-silicate interface. In a next step we compare the spectroscopic data with information from dielectric studies, based on temperature dependent leakage current studies. We observe a close relation between dielectric properties and the electronic structure.