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DF: Fachverband Dielektrische Festkörper

DF 6: Poster I

DF 6.7: Poster

Dienstag, 24. März 2009, 09:30–12:30, P5

Pulsed laser deposition of praseodymium oxide on silicon at oxygen background — •Biwang Yang, Markus Ratzke, and Jürgen Reif — LS Experimentalphysik II, BTU Cottbus und IHP/BTU JointLab, Konrad-Wachsmann-Allee 1, D-03046 Cottbus

Praseodymium oxide thin films, as a potential high-k candidate for future silicon microelectronics, can be produced by Pulsed-Laser Deposition (PLD).

However, in contrast to expectation, the procedure does not transfer the stoichiometry of the target material, the films appear to be oxygen deficient. To compensate for this loss of oxygen, the reason of which is not yet clear, we applied an additional oxygen background in our deposition chamber at different pressures.

While both the growth rate and the oxygen content of the layers, produced in this way, show a distinct dependency on oxygen pressure, the electrical properties are not significantly different from films deposited without background gas.