Dresden 2009 – scientific programme

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DF: Fachverband Dielektrische Festkörper

DF 7: Advanced Dielectrics

DF 7.2: Talk

Tuesday, March 24, 2009, 14:40–15:00, WIL A317

Electronic transport across single metallic nanowires fabricated through ferroelectric lithography — •Alexander Haußmann and Lukas M. Eng — Institut für Angewandte Photophysik, Technische Universität Dresden, D-01062 Dresden

The presence of different surface charges and thus different surface reactivities offers the possibility of exploiting domain-structured ferroelectrics as templates for the assembling of various functional nanostructures. This technique therefore is claimed ferroelectric lithography [1], bearing the power for the controlled bottom-up assembly and integration over large sample areas.

Here, we report on both the assembly and characterisation of noble-metal nanowires that were deposited photochemically at 180^∘ domain walls on 5 mol% Mg-doped congruent LiNbO₃ single crystal templates. After connecting these wires to macroscopic contact leads, ohmic conduction properties were revealed in such wires by recording I-V-characteristics in conjunction to Kelvin probe force microscopy (KPFM) [2]. Furthermore, investigations at high spatial resolution were performed in order to quantify a possible spatial separation between the domain wall and the photochemically reactive zone.

[1] S.V. Kalinin, et al., Nano Letters 2, 589 (2002)

[2] U. Zerweck, et al., Phys. Rev. B 71, 125424 (2005)